EN
cn 
ja 
ko 
de 
es 
it 
vi 
th 
ms 
id 
Address:
155 Suhong East Road, Suzhou Industrial Park, Jiangsu Province, China 
WHAT ARE YOU LOOKING FOR?
In today’s fast-paced semiconductor landscape, Indium Phosphide (InP) is quietly transforming the realms of optical communication, high-frequency devices, and optoelectronics. With its high electron mobility, direct bandgap properties, and superior optoelectronic performance, InP has become an indispensable core material for 5G communication and high-speed optoelectronic devices. Yet, the precision polishing of this material presents a challenging "invisible art."
With a Mohs hardness of only 3, indium phosphide is soft and brittle. Traditional mechanical polishing methods often lead to surface scratches or breakage, necessitating a process that efficiently removes material at low pressure through a precise synergy of chemical etching and mechanical grinding.
Additionally, the polishing process for Indium Phosphide requires strict control over chemical stability. The material reacts easily with acidic or alkaline polishing solutions, which can cause surface issues like "orange peel" effects or excessive etching. Thus, polishing solutions must maintain a regulated pH level—typically neutral or slightly alkaline—and incorporate specific corrosion inhibitors to suppress unwanted side reactions.
Optoelectronic devices demand remarkably low surface roughness, typically below 0.5 nm, with no subsurface damage. Achieving this goal requires polishing solutions that ensure uniform material removal through precise coordination of abrasive particle size distribution and dispersants.
The industry commonly employs a segmented polishing process to address this challenge: the rough polishing phase uses larger abrasive particles and higher oxidant concentrations for rapid material removal, while the fine polishing phase transitions to smaller abrasive particles (such as 50-100 nm SiO₂) and lower oxidant concentrations to reduce roughness to Ra 0.1-0.3 nm. Finally, a finishing stage removes any residual damage layer.
In the realm of indium phosphide polishing technology, Chinese companies have been diligently working behind the scenes and making groundbreaking advancements. By utilizing high-purity colloidal silica particles, they have successfully avoided scratching processed components, making these solutions particularly suitable for intermediate or fine polishing of semiconductor materials like indium phosphide.
These polishing products typically have a milky appearance, with particle sizes controlled between 90-110 nanometers, SiO₂ content at 39-41%, and a stable pH range of 9.0-11.0. Carefully designed formulas allow for polishing removal rates of 2-6 μm/hour, achieving post-polishing surface roughness of Ra <0.2 nm, thus meeting the demands of high-end semiconductor manufacturing.
Polishing Indium Phosphide is not simply a material removal process; it is a comprehensive engineering effort aimed at achieving surface perfection. Post-polishing cleaning and handling are equally crucial.
Advanced industry methods include ultrasonic cleaning (using megasonic waves at 1-2 MHz) to eliminate surface particle contamination, chemical cleaning (using diluted HCl or SC-1 solutions) to remove metal ions and organic substances, and employing isopropanol vapor drying or Marangoni drying to prevent water spot residues.
An innovative approach also involves using a fine polishing solution free of SiO₂, incorporating citric acid to enhance chemical reactions between the indium phosphide wafer and the polishing solution, while subsequently employing a mixed weak acid for cleaning to effectively reduce residual Si impurities and other contaminants on the wafer surface.
Behind every technological breakthrough in the semiconductor material field lies countless hours of dedication and exploration. In niche areas such as indium phosphide polishing, a spirit of craftsmanship is essential—years of unwavering research, experimentation, and refinement.
This persistence is not blind; it is grounded in a profound understanding of materials science and keen insights into customer needs. From controlling the distribution of abrasive particle sizes to the careful selection of dispersants, from precise pH regulation to balancing oxidant concentrations, every step demands a commitment to excellence.
As 5G communication, the Internet of Things, and artificial intelligence technologies develop rapidly, the demand for indium phosphide devices will continue to grow, elevating the requirements for polishing processes. Moving forward, indium phosphide polishing technology will evolve towards greater efficiency, precision, and environmental sustainability, necessitating collaborative innovation across the entire industry supply chain.
In this art of precise optical polishing, Chinese companies, leveraging their technological accumulation and innovative spirit, are gradually stepping into the spotlight on the world stage, contributing Chinese wisdom and solutions to the development of the global semiconductor industry.
