Moreover, silicon carbide wafers has a unique characteristics, their transparency, radiation resistance, high breakdown voltage, and low leakage current. These attributes position silicon carbide as an ideal material for optoelectronic and solar energy devices, promising advancements in various technological sectors. Let us take a insight into the intricate process of producing single-crystal silicon carbide substrates, see the challenges associated with achieving ultra-smooth surface quality through cutting, grinding, and polishing. As the industry adopts chemical mechanical planarization (CMP) technology to address the material's ultra-high hardness, utilizing alumina polishing slurry for rough polishing followed by silicon dioxide polishing slurry for fine polishing, underscores the complexity and precision involved in the manufacture of silicon carbide substrates.
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