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This abstract provides an overview of meticulous precautions for polishing silicon carbide substrates, crucial for the production of high-performance semiconductor devices. The guidelines emphasize the importance of surface cleanliness, the selection of suitable polishing slurry and pad, and the meticulous adjustment of pressure and rotation speed during the polishing process. By addressing these critical nuances, the unveiled precautions offer manufacturers a comprehensive framework to optimize the polishing process, ultimately enhancing the quality and efficiency of semiconductor device production.