EN
cn 
ja 
ko 
de 
es 
it 
vi 
th 
ms 
id 
Address:
155 Suhong East Road, Suzhou Industrial Park, Jiangsu Province, China
In the semiconductor industry, the precision machining process for high-performance silicon carbide (SiC) wafers faces a significant challenge due to the emergence of processing defects known as collapse phenomena. These slope-like defects, which can occur even after polishing, stem from microcracks, impurities, and lattice defects within the SiC crystals. Factors such as inadequate polishing techniques, oversized wafers, and unstable polishing slurry have been identified as key contributors to this issue, prompting experts to call for enhanced methods and technologies in wafer preparation to ensure the quality and reliability of next-generation semiconductor devices.
